Device scaling has been the predominant means that the semiconductor industry has used to achieve the continual gains in productivity and performance predicted by Moore’s Law. In the past several years, scaled device performance has hit bottlenecks limited by fundamental materials properties traditional transistor materials such as silicon, silicon dioxide, and polysilicon. These new materials impose added challenges to the methods used to produce very shallow, highly activated junctions. For example, the limited thermal stability of many high k materials will further constrain the thermal budgets required by dopant activation. These challenges associated with the diverse new materials and the control of physical interfaces necessitate implementation of new revolutionary enabling technologies.
For leading-edge logic, the short time scale of millisecond annealing has been shown to minimize diffusion and leakage-related yield loss. By leveraging its core competencies in optics engineering, system integration and extensive knowledge of laser processing, Ultratech has developed revolutionary technology products –LSA101 and LSA201– to enable thermal annealing solutions at the 65 nm technology node and beyond. This laser-based annealing technology achieves very shallow, highly activated abrupt junctions at extremely low thermal budget.
Laser Spike Annealing
Ultratech’s first commercial laser processing system provides solutions to the difficult challenge of fabricating ultra-shallow junction and highly activated source/drain contacts. LSA operates near-instantaneously at temperatures up to 1350 C. At these temperatures, nearly full activation with minimal diffusion is achieved in micro-seconds. Ultratech’s proprietary hardware design also effectively minimizes the pattern density effect, reducing reflectivity variations from 20% in a typical structure to less than 2%.
- Source Drain Anneal
- High K Anneal
- Silicide Formation
- Source Drain Extension
- Stress Memorization Technique
- Defect Anneal
- Film Stress Modification